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IRF9Z20, SiHF9Z20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? P-Channel Versatility
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
V GS = - 10 V
- 50
26
0.28
?
?
?
Compact Plastic Package
Fast Switching
Low Drive Current
Available
RoHS*
COMPLIANT
Q gs (nC)
Q gd (nC)
Configuration
6.2
8.6
Single
?
?
?
Ease of Paralleling
Excellent Temperature Stability
Compliant to RoHS Directive 2002/95/EC
TO-220AB
G
S
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel Power MOSFET’s are designed for
G
D
S
D
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel Power MOSFET’s such as voltage
P-Channel MOSFET
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel Power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF9Z20PbF
SiHF9Z20-E3
IRF9Z20
SiHF9Z20
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 50
± 20
UNIT
V
Continuous Drain Current
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
- 9.7
- 6.1
A
Pulsed Drain Current a
I DM
- 39
Linear Derating Factor
Inductive Current, Clamped L = 100 μH I LM
Unclamped Inductive Current (Avalanche Current) I L
Maximum Power Dissipation T C = 25 °C P D
Operating Junction and Storage Temperature Range T J , T stg
Soldering Recommendations (Peak Temperature) for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V DD = - 25 V, starting T J = 25 °C, L =100 μH, R g = 25 ?
c. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90121
S11-0511-Rev. B, 21-Mar-11
0.32
- 39
- 2.2
40
- 55 to + 150
300 c
W/°C
A
A
W
°C
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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